Design of a conventional latch type sense amplifier assuming a MUX16 configuration for the load
Need to design and analyze the structural matched and common centroid layouts as well along with the base layout
| Specification | Value |
|---|---|
Input stimuli given to measure SAen-Q delay and Bitline differential at which Sense Amplifier Enable Signal (SAen) should be triggered for correct Sense somethin Amplifier operation.
| Input | Amplitude for READ 1 (V) | Amplitude for READ 0 (V) | Delay (ps) | Pulse Width (ps) | Period (ps) |
|---|---|---|---|---|---|
| BL | 1.08 V | Piecewise Linear Discharge | - | - | - |
| BLB | Piecewise Linear Discharge | 1.08 V | - | - | - |
| PCH | Pulse: 0 - 1.08 V | Pulse: 0 - 1.08 V | 50 ps | 250 ps | 2 ns |
| SAen | Pulse: 0 - 1.08 V | Pulse: 0 - 1.08 V | 150 ps | 100 ps | 2 ns |
- We firstly found the SAen-Q delay and BL differential voltage by tweaking the BL discharge rate for different sizings
- From the values, we picked and fixed the BL discharge rate for which we get the lowest Bitline differential voltage
- Now with the fixed differential voltage, we vary the sizing and pick the one which offers the best tradeoff between delay and transistor sizes
| Transistor Name | Purpose | Width (um) | Length (um) |
|---|---|---|---|
| M5 | Tail NMOS | 2.8 | 0.06 |
| M1, M4 | Latch NMOS | 2.4 | 0.06 |
| M0, M7 | Access PMOS | 1.8 | 0.06 |
| M2, M3 | Latch PMOS | 1.6 | 0.06 |
| M6, M12, M14, M15 | Latch 1 MOS | 0.2 | 0.06 |
| M13, M17, M16, M18 | Latch 2 MOS | 0.2 | 0.06 |
| M8, M9, M10 | Precharge PMOS | 0.135 | 0.06 |







