OxideTFT-Studio is a high-precision, interactive physics simulation tool for Amorphous Oxide Semiconductor Thin-Film Transistors (AOS-TFTs), specifically focused on IGZO technology.
It uses the Finite Difference Method (FDM) to solve the 2D Poisson equation self-consistently with carrier statistics, allowing researchers and engineers to visualize potential distribution, carrier concentration, and electric fields in real-time.
🛠️ Usage
website:https://oxide-tft-simulation-z3wjys5v3czfmapanua62v.streamlit.app
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Multi-Structure Support: Simulate various device architectures:
- Double Gate
- Single Gate (Top/Bottom)
- Source-Gated Transistor
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Advanced Stacked Buffer Model:
- Support for composite dielectric layers: SiN (Nitride) + SiO (Oxide) buffer stacks.
- Configurable thickness and permittivity for all layers (Buffer, Active IGZO, GI).
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High-Precision Mesh:
- User-defined mesh density (up to 1000+ points in the active region).
- Physics-aware sub-sampling for high-definition rendering of the thin active channel (50nm typical).
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Interactive Visualization:
- Heatmaps for Carrier Concentration (
$n$ ) and Electric Field ($E$ ). - Vertical 1D cut-lines for profile analysis.
- Powered by Plotly for interactive zooming and inspection.
- Heatmaps for Carrier Concentration (
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Clone the repository
git clone [https://github.com/your-username/oxide-tft-simulation.git](https://github.com/your-username/oxide-tft-simulation.git) cd oxide-tft-simulation -
Install dependencies It is recommended to use a virtual environment.
pip install -r requirements.txt
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Run the Simulation
streamlit run app.py
The tool will open automatically in your web browser at
http://localhost:8501.
The core solver (solver.py) implements a numerical solution for the Poisson equation:
Where:
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$n$ is the electron density calculated using Fermi-Dirac statistics (approximated for oxide semiconductors). -
$\phi$ is the electrostatic potential. -
$\epsilon$ is the position-dependent permittivity (SiN, SiO, IGZO).
The non-linear system is solved using a Newton-Raphson iteration loop until convergence is achieved.
app.py: The Streamlit frontend interface. Handles user input, calls the solver, and renders Plotly charts.solver.py: The physics engine. Contains theTFTPoissonSolverclass, mesh generation logic, and the finite difference matrix builder.requirements.txt: List of Python dependencies (numpy, scipy, streamlit, plotly).
OxideTFT-Studio 是一款专为非晶氧化物半导体薄膜晶体管(AOS-TFTs)开发的高精度交互式物理仿真工具,重点针对 IGZO 技术进行了优化。
该项目使用有限差分法 (FDM) 对二维泊松方程进行自洽求解,结合载流子统计模型,允许研究人员和工程师实时可视化器件内部的电势分布、载流子浓度以及电场强度。
🛠️ Usage
传送门:https://oxide-tft-simulation-z3wjys5v3czfmapanua62v.streamlit.app
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多结构支持 (Multi-Structure Support):
- 支持模拟多种器件架构:双栅 (Double Gate)、单栅 (顶栅/底栅)、源控晶体管 (Source-Gated)。
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高级叠层 Buffer 模型 (Stacked Buffer Model):
- 支持复合介质层模拟:SiN (氮化硅) + SiO (氧化硅) 叠层结构。
- 支持自定义所有层(Buffer, 有源层 IGZO, GI)的厚度和介电常数。
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高精度网格 (High-Precision Mesh):
- 用户可自定义网格密度(有源区支持 1000+ 网格点)。
- 针对超薄沟道(典型值 50nm)内置了物理感知的子采样算法,实现高清渲染。
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交互式可视化 (Interactive Visualization):
- 提供载流子浓度 (
$n$ ) 和电场 ($E$ ) 的高分辨率热力图。 - 支持垂直方向的 1D 切面分析 (Cut-line profile)。
- 基于 Plotly 引擎,支持图表的实时交互、缩放和数据探查。
- 提供载流子浓度 (
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克隆仓库
git clone [https://github.com/your-username/oxide-tft-simulation.git](https://github.com/your-username/oxide-tft-simulation.git) cd oxide-tft-simulation -
安装依赖 建议在 Python 虚拟环境中运行。
pip install -r requirements.txt
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运行仿真
streamlit run app.py
启动后,工具将自动在你的默认浏览器中打开,地址通常为
http://localhost:8501。
核心求解器 (solver.py) 实现了泊松方程的数值解:
其中:
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$n$ 为电子浓度,由费米-狄拉克统计计算(针对氧化物半导体进行了近似)。 -
$\phi$ 为静电势。 -
$\epsilon$ 为位置相关的介电常数(分别对应 SiN, SiO, IGZO 等区域)。
该非线性系统通过牛顿-拉夫逊 (Newton-Raphson) 迭代法求解,直至达到收敛标准。
app.py: Streamlit 前端界面。负责处理用户输入、调用求解器并渲染 Plotly 图表。solver.py: 物理引擎后端。包含TFTPoissonSolver类、自适应网格生成逻辑以及有限差分矩阵构建算法。requirements.txt: 项目所需的 Python 依赖库列表 (numpy, scipy, streamlit, plotly)。