This repository contains a numerical simulation of non-stationary electron transport in direct bandgap semiconductors. It solves the Boltzmann Transport Equations using the Euler Method to analyze phenomena such as Velocity Overshoot and Energy Relaxation in the picosecond timescale.
As semiconductor devices scale down to the nanometer regime, steady-state drift-diffusion models become insufficient. This project models the transient response of electrons to rapidly changing electric fields, which is critical for designing High-Frequency (THz) and III-V HEMT devices used in modern optical and satellite communications.
- Physics Modeling: Solves coupled differential equations for Drift Velocity, Average Energy, and Relaxation Times.
- Algorithm: Implements a time-stepped Euler Method simulation (1fs step size).
- Visualization: Automatically plots E-Field response, Effective Mass changes, and Velocity Overshoot characteristics.
electron_simulation.m: The core MATLAB script performing the numerical analysis.Project_Report.pdf: Detailed academic paper explaining the theoretical background and result analysis.
- Language: MATLAB
- Domain: Solid State Devices, Computational Physics, Semiconductor Theory
The simulation demonstrates that rapid changes in the Electric Field lead to a "Velocity Overshoot" effect, allowing electrons to temporarily exceed saturation velocity—a key principle leveraged in high-speed silicon engineering.
Author: Yusuf Berat Bölükbaş "This project was developed as part of the EE419 Solid State Devices course at Middle East Technical University."